| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having high reliability for suppressing irregularity of a film thickness of a side wall part in a sacrifice side wall process. SOLUTION: An element separation area 2 comprising trench separation is formed on a semiconductor substrate 1 in a process shown in figure 2 (a). A gate electrode part 6a provided with a gate insulation film 3 comprising a silicon oxide and oxynitride film in order from below, a lower gate electrode 4a comprising polysilicon, an upper gate electrode 4b comprising a metal laminating filmand a gate electrode part 6a comprising a silicon nitride film is formed on the semiconductor substrate 1. Then, the upper face of the semiconductor substrate 1 is divided into areas of 10×10μm<SP>2</SP>, the gate electrode part 6a is formed on the sparse area D2 so that a surface area ratio of a dense area D1 in which the gate electrode part 6a is designed the most dense to a sparse area D2 in which the gate electrode part 6a is designed the most sparse is 1.6 times or lower, and at the same time, a dummy gate electrode part 6b having the same structure as the gate electrode part 6a is formed. COPYRIGHT: (C)2003,JPO
|
