| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a reliable light emitting semiconductor device which is capable of increasing the light emission efficiency and also of keeping the light emission characteristics for a long time. <P>SOLUTION: The semiconductor light emitting device has such a structure that, on the top face of a monocrystalline substrate 1, a semiconductor layer 2 of one conductivity and a semiconductor layer 3 of the opposite conductivity are stacked in order, and one electrode 5 is formed on part of the semiconductor layer 3 of the opposite conductivity, while the other electrode 6 made of metal is formed on the bottom face of the monocrystalline substrate 1. At least an upper region 3c of the semiconductor layer 3 of the opposite conductivity is formed of AlGaAs, and a contact layer 4 is interposed between the semiconductor layer 3 of the opposite conductivity and the electrode 5. The contact layer 4 is formed of GaAs and its end is extended to the periphery of the semiconductor layer 3 of the opposite conductivity. <P>COPYRIGHT: (C)2003,JPO |
