| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing on-resistance of channels without increasing an element area and causing characteristic deterioration such as short channel effect or the like, and to provide its manufacturing method. SOLUTION: This device comprises a gate electrode 7 formed on a semiconductor substrate 1, two conductive layers 3 to be a source or drain, which are formed on the semiconductor substrate 1, and at least two channel layers 2a, 2b, which are arranged in a direction perpendicular to a main surface of the semiconductor substrate 1 and are formed so as to connect in parallel to the two conductive layers 3. The channel layers 2a, 2b comprise a prescribed conductivity type, and at least two gate diffusion layers 4a, 4b, which form pn junctions with each channel layer 2a, 2b under a gate electrode 7, respectively, are formed, and at least two gate diffusion layers 4a, 4b are electrically connected by a connection layer 5. COPYRIGHT: (C)2003,JPO
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