发明名称 SIMULATOR AND SIMULATING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a simulator in which the effect of stress, or the like, onto the characteristics of an element can be evaluated quantitatively. SOLUTION: The simulator for evaluating the characteristics of a semiconductor device comprises a first calculating section for calculating a first value corresponding to a specified physical value for at least a partial region of the semiconductor device while taking account of a specified physical quantity, a second calculating section for calculating a second value corresponding to a physical value for at least a partial region of the semiconductor device without taking account of a physical quantity, and a visualizing section for displaying correlation of the first and second values in a specified form. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003163347(A) 申请公布日期 2003.06.06
申请号 JP20010362629 申请日期 2001.11.28
申请人 TOSHIBA CORP 发明人 KUSUNOKI NAOKI;AOKI NOBUTOSHI
分类号 G01R31/28;G06F17/50;H01L21/336;H01L21/66;H01L29/00;H01L29/78;H01L29/786;(IPC1-7):H01L29/00 主分类号 G01R31/28
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