RUTHENIUM COMPOUND FOR ORGANOMETALLIC CHEMICAL VAPOR DEPOSITION, AND RUTHENIUM-CONTAINING THIN FILM OBTAINED FROM THE COMPOUND

摘要

PROBLEM TO BE SOLVED: To provide a ruthenium compound for an organometallic chemical vapor deposition method that can control a deposition rate and reproducibility of the deposition rate using a solid sublimation method, and to provide a ruthenium-containing thin film obtained from the compound. SOLUTION: The ruthenium compound for the metallic organic chemical vapor deposition method consists of bis(cyclopentadienyl)ruthenium, and has particle sizes of 0.02-5.5 mm and an average particle size of 0.03-5.0 mm. COPYRIGHT: (C)2003,JPO