发明名称 ALUMINUM-CONTAINING SILICON ALLOY TARGET FOR SPUTTERING
摘要 PROBLEM TO BE SOLVED: To provide an aluminum-containing silicon alloy target for sputtering, which develops no crack and few particles even when sputtered with a direct current of high output. SOLUTION: The aluminum-containing silicon alloy target for sputtering has a composition comprising 0.1-15 mass% Al, 10-50,000 ppm P, the balance Si with unavoidable impurities, and an atom ratio adjusted so as to be P/Al≤1. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003160862(A) 申请公布日期 2003.06.06
申请号 JP20010362015 申请日期 2001.11.28
申请人 MITSUBISHI MATERIALS CORP 发明人 TANIGUCHI KENICHI
分类号 B22D21/00;B22D23/06;B22D27/04;C23C14/34;(IPC1-7):C23C14/34 主分类号 B22D21/00
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