发明名称 SPUTTERING TARGET AND PRODUCTION METHOD THEREFOR
摘要 <p>A sputtering target produced by stamp forging, characterized in that an average crystal grain size D at a portion where an average crystal grain size is the largest and an average crystal grain size d at a portion where an average crystal grain size is the smallest are related as 1.0&lt;D/d&lt;2.0. A method capable of constantly producing a sputtering target excellent in characteristics by improving and elaborating forging and heat treating processes to render a crystal size fine and uniform, and a sputtering target excellent in quality obtained by this method.</p>
申请公布号 WO2003046250(P1) 申请公布日期 2003.06.05
申请号 JP2002007715 申请日期 2002.07.30
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