发明名称 Electrical and thermal contact for use in semiconductor devices and methods for fabricating the same
摘要 An electrical and thermal contact which includes an intermediate conductive layer, an insulator component, and a contact layer. The insulator component is fabricated from a thermally insulative material and may be sandwiched between the intermediate conductive layer and the contact layer. The electrical and thermal contact may be fabricated by forming a first conductive layer on a surface of the semiconductor device, depositing a dielectric layer adjacent the first layer, patterning the dielectric layer to define the insulator component, and forming a second conductive layer adjacent the insulator component and in partial contact with the first layer. The first and second layers are respectively patterned to define the intermediate conductive layer and the contact layer. The electrical and thermal contact effectively contains heat within and prevents heat from dissipating from a contacted structure, such as a phase change component that may be switched between two or more electrical states.
申请公布号 US2003104685(A1) 申请公布日期 2003.06.05
申请号 US20020317420 申请日期 2002.12.11
申请人 REINBERG ALAN R. 发明人 REINBERG ALAN R.
分类号 H01L23/525;H01L45/00;(IPC1-7):H01L21/44;H01L21/48;H01L21/50 主分类号 H01L23/525
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