发明名称 |
Silicon film, semiconductor device, and process for forming silicon films |
摘要 |
In a process for forming a silicon-based film on a substrate according to the present invention, the substrate has a temperature gradient in the thickness direction thereof in the formation of the silicon-based film and the temperature gradient is made such that a deposition surface of the substrate has a higher temperature than a backside or the direction of the temperature gradient is reversed. With this configuration, the present invention provides a silicon-based thin film having good properties at a high deposition rate and provide a semiconductor device including it. The present invention also provides a semiconductor device including the silicon-based thin films that has good adhesion and weather-resisting properties and that can be manufactured in a short tact time.
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申请公布号 |
US2003104664(A1) |
申请公布日期 |
2003.06.05 |
申请号 |
US20020113675 |
申请日期 |
2002.04.02 |
申请人 |
KONDO TAKAHARU;OKABE SHOTARO;SANO MASAFUMI;SAKAI AKIRA;KODA YUZO;HAYASHI RYO;SUGIYAMA SHUICHIRO;MORIYAMA KOICHIRO |
发明人 |
KONDO TAKAHARU;OKABE SHOTARO;SANO MASAFUMI;SAKAI AKIRA;KODA YUZO;HAYASHI RYO;SUGIYAMA SHUICHIRO;MORIYAMA KOICHIRO |
分类号 |
H01L21/205;C23C16/46;C23C16/505;C23C16/52;C23C16/54;H01L21/336;H01L21/365;H01L21/8238;H01L29/786;H01L31/04;H01L31/075;H01L31/18;H01L31/20;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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