发明名称 Low Intermodulation thick film microwave termination
摘要 A thick-film microwave termination device includes a substrate, such as a ceramic substrate, and multiple thick-film resistors formed on the substrate. The thick-film resistors each have a predetermined resistivity generally less than a desired characteristic impedance of the device. The resistors are connected together in series so as to (i) provide an overall impedance equal to the desired characteristic impedance, and (ii) generate less intermodulation distortion in microwave signals coupled to the termination device than would be generated by an alternative termination device employing a single thick film resistor whose resistivity is equal to the desired characteristic impedance. In a disclosed 50-ohm termination, four square elements are formed of thick-film material having resistivity of 12.5 ohms per square, and these four elements are connected in series on the substrate to realize the desired 50 ohm termination impedance.
申请公布号 US2003102935(A1) 申请公布日期 2003.06.05
申请号 US20020310518 申请日期 2002.12.05
申请人 BARRY INDUSTRIES, INC. 发明人 BARRY RICHARD L.;SCHMIDT RONALD
分类号 H01P1/26;(IPC1-7):H01P1/26 主分类号 H01P1/26
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