发明名称 |
Method for making CMOS-based monolithic micro electromechanical system (MEMS) integrated circuits and integrated circuits made thereby |
摘要 |
A method is provided for fabricating a CMOS based micro-electromechanical system (MEMS) integrated circuit. A CMOS circuit layout is fabricated on a silicon substrate. A first thick film photo resist layer is then deposited on the CMOS circuit layout. To prevent oxidation from occurring between aluminum and gold, a seed layer is applied to the first thick film photo resist layer. A mold is then formed by selectively depositing a second thick film photo resist layer on portions of the seed layer so that a conductive layer can be applied to the mold. Portions of the seed layer are then removed and a stress compensation material is applied to the conductive layer. A back side surface of the silicon substrate is then etched to remove areas not covered by a mask, and the first thick film photo resist layer is removed via openings in the CMOS circuit layout.
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申请公布号 |
US2003104649(A1) |
申请公布日期 |
2003.06.05 |
申请号 |
US20020218902 |
申请日期 |
2002.08.15 |
申请人 |
OZGUR MEHMET;ZAGHLOUL MONA ELWAKKAD |
发明人 |
OZGUR MEHMET;ZAGHLOUL MONA ELWAKKAD |
分类号 |
B81B3/00;B81B7/02;B81C1/00;(IPC1-7):H01L21/00;H01L29/82;H01L29/00 |
主分类号 |
B81B3/00 |
代理机构 |
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主权项 |
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地址 |
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