Semiconductor memory device reading data based on memory cell passing current during access

摘要

A data read circuit produces read data in accordance with a difference between currents flowing through first and second nodes, respectively. In a data read operation, a current transmitting circuit and a reference current generating circuit pass an access current corresponding to a passing current of a selected memory cell and a predetermined reference current through first and second nodes, respectively. In a test mode, a current switching circuit passes equal test currents through the first and second nodes instead of the access current and the reference current, respectively. Thereby, offset of the current sense amplifier in the data read circuit can be evaluated.