| 摘要 |
<p>A susceptor (10) for supporting a semiconductor substrate (W) during the growth of gaseous phase, wherein a counterbore (11) for disposing the semiconductor substrate (W) therein is formed in the upper surface thereof in the form of two stages having an upper stage counterbore part (11a) for supporting the outer peripheral edge part of the semiconductor substrate (W) and a lower stage counterbore part (11b) formed at the center side lower stage of the upper stage counterbore part (11a), and hole parts (12) passed through to the rear surface of the susceptor and brought into an open state also during the growth of gas phase are formed in the lower stage counterbore part (11b).</p> |
