| 摘要 |
<p>A production method for a silicon wafer comprising a lapping process by at least free abrasive grains, and an etching process by an alkali etchant, characterized in that in the lapping process lapping is performed by using free abrasive grains having a maximum grain size of up to 21 μm and an average grain size of up to 8.5 μm, and then in the etching process etching is performed by using as an alkali etchant an alkali aqueous solution having an alkali component concentration of at least 50 Wt.%; and a silicon wafer produced by this method. Accordingly, the production method that can prevent deterioration in wafer surface roughness and in flatness of a wafer as a whole, and a silicon wafer produced by the method are provided.</p> |
