| 摘要 |
<p>A second Si layer (23), a first SiGe layer (22), and a first Si layer (21) are formed as a multilayer epitaxial layer in this order on a bond wafer (2). A hydrogen high-concentration layer is formed in the second Si layer (23) by hydrogen ion implantation, and a bonding heat treatment and separation are conducted. A multilayer body, as an epitaxial layer to be separated, comprising the first Si layer (21), the first SiGe layer (22), and the separated second Si layer (23) is formed in one bonded piece on a silicon oxide layer (3). The thus separated second Si layer (23) is selectively etched by using the first SiGe layer (22a) as an etch stop layer. Thus, an SOI wafer can be manufactured such that both the film thickness uniformity of a wafer and that of wafers can be reduced to a sufficiently low level even if the required film thickness level of the SOI layer is very low.</p> |
