| 摘要 |
PURPOSE: A method for manufacturing a bipolar junction transistor is provided to easily control the width of a base and to simplify the manufacturing process by using an SOI(Silicon On Insulator) layer. CONSTITUTION: A buried oxide layer(2) is formed by implanting oxygen ions into a semiconductor substrate(1) and an SOI layer is formed on the substrate. An n+ SOI layer(3) is formed by implanting N-type impurities. A field oxide layer(4) is locally formed by thermal oxidation of the n+ SOI layer using a nitride pattern as a mask. An oxide layer(5) is selectively formed on the n+ SOI layer including the field oxide layer. P-type impurities are implanted to the exposed SOI layer using the oxide layer as a mask. A polysilicon spacer is formed at both sidewalls of the oxide layer. N-type impurities are also implanted to the p- SOI layer using the polysilicon spacer as a mask.
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