发明名称 |
VERTICAL MOSFETS HAVING CROSSING TRENCH-BASED GATE ELECTRODES THAT EXTEND INTO DEEPER TRENCH-BASED SOURCE ELECTRODES AND METHODS OF FORMING SAME |
摘要 |
Vertical MOSFETs include a semiconductor substrate having a plurality of semiconductor mesas therein that are separated by a plurality of deep stripe-shaped trenches. These stripe-shaped trenches extend in parallel and lengthwise across the substrate in a first direction. A plurality of buried insulated source electrodes are formed in the plurality of deep stripe-shaped trenches. A plurality of insulated gate electrodes are also provided that extend in parallel across the plurality of semiconductor mesas and into shallow trenches defined within the plurality of buried insulated source electrodes. A surface source electrode is provided on the substrate. The surface source electrode is electrically connected to each of the buried source electrodes at multiple locations along the length of each buried source electrode and these multiple connections decrease the effective source electrode resistance and enhance device switching speed. |
申请公布号 |
WO03046996(A1) |
申请公布日期 |
2003.06.05 |
申请号 |
WO2002US37187 |
申请日期 |
2002.11.19 |
申请人 |
SILICON WIRELESS CORPORATION;BALIGA, BANTUAL, JAYANT |
发明人 |
BALIGA, BANTUAL, JAYANT |
分类号 |
H01L21/336;H01L21/8234;H01L27/088;H01L27/095;H01L29/06;H01L29/08;H01L29/40;H01L29/417;H01L29/423;H01L29/772;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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