METHOD OF MAKING DIODE HAVING REFLECTIVE LAYER

摘要

A method of forming a light emitting diode includes forming a transparent substrate (100A) and a GaN buffer layer (120) on the transparent substrate (100A). An n-GaN layer (140) is formed on the buffer layer (120). An active layer (160) is formed on the n-GaN layer (140). A p-GaN layer (180) is formed on the active layer (160). A p-electrode (240) is formed on the p-GaN layer (180) and an n-electrode (250) is formed on the n-GaN layer (140). A reflective layer (200) is formed on a second side of the transparent substrate (100A). A scribe line (not shown) is formed on the substrate (100A) for separating the diodes on the substrate. Also, a cladding layer of AlGaN (not shown) is between the p-GaN layer and the active layer.