| 摘要 |
A semiconductor device and method of manufacture are provided wherein a contact hole can be formed with increased contact area while maintaining sufficient isolation between an electroconductive layer deposited in the contact hole and an adjacent wire. According to one embodiment (100), a double-layered side-wall insulating layer can be formed within a contact hole (116). The upper (second) side-wall insulating layer (120) can be etched back to expose part of the lower (first) side-wall insulating layer (118) formed in the bottom of the contact hole (116). Subsequently, the exposed portion of the first side-wall insulating layer (118) can be subject to a wet etch to remove the portion of the first side-wall insulating layer (118) at the bottom of the contact hole (116).
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