METHOD OF IMPLANTATION AFTER COPPER SEED DEPOSITION
摘要
A method of fabricating an integrated circuit can include forming a barrier layer along lateral side walls and a bottom of a via aperture, forming a seed layer proximate and conformal to the barrier layer, and forming an implanted layer proximate and conformal to the barrier layer and the seed layer. The via aperture is configured to receive a via material that electrically connects a first conductive layer and a second conductive layer.
申请公布号
WO03046978(A2)
申请公布日期
2003.06.05
申请号
WO2002US32554
申请日期
2002.10.11
申请人
ADVANCED MICRO DEVICES, INC.
发明人
LOPATIN, SERGEY;BESSER, PAUL, R.;BUYNOSKI, MATTHEW, S.