发明名称 |
Method and apparatus for measuring substrate layer thickness during chemical mechanical polishing |
摘要 |
The thickness of a layer on a substrate is measured in-situ during chemical mechanical polishing. A light beam is divided through a window in a polishing pad, and the motion of the polishing pad relative to the substrate causes the light beam to move in a path across the substrate surface. An interference signal produced by the light beam reflecting off the substrate is monitored, and a plurality of intensity measurements are extracted from the interference signal. Each intensity measurement corresponds to a sampling zone in the path across the substrate surface. A radial position is determined for each sampling zone, and the intensity measurements are divided into a plurality of radial ranges according to the radial positions. The layer thickness is computed for each radial range from the intensity measurements associated with that radial range.
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申请公布号 |
US2003104761(A1) |
申请公布日期 |
2003.06.05 |
申请号 |
US20030342653 |
申请日期 |
2003.01.14 |
申请人 |
APPLIED MATERIALS, INC., A DELAWARE CORPORATION |
发明人 |
WISWESSER ANDREAS NORBERT;SCHOENLEBER WALTER;SWEDEK BOGUSLAW |
分类号 |
B24B37/04;B24B49/12;B24D7/12;G01B11/06;H01L21/66;(IPC1-7):B24B49/00;B24B51/00 |
主分类号 |
B24B37/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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