发明名称 Method of junction formation for CIGS photovoltaic devices
摘要 Sulfur is used to improve the performance of CIGS devices prepared by the evaporation of a single source ZIS type compound to form a buffer layer on the CIGS. The sulfur may be evaporated, or contained in the ZIS type material, or both. Vacuum evaporation apparatus of many types useful in the practice of the invention are known in the art. Other methods of delivery, such as sputtering, or application of a thiourea solution, may be substituted for evaporation.
申请公布号 US2003102023(A1) 申请公布日期 2003.06.05
申请号 US20020251337 申请日期 2002.09.20
申请人 DELAHOY ALAN E. 发明人 DELAHOY ALAN E.
分类号 H01L;H01L31/00;H01L31/032;(IPC1-7):H01L31/00 主分类号 H01L
代理机构 代理人
主权项
地址