| 摘要 |
A semiconductor device comprising a source region, a drain region, and a buried insulating film. The buried insulating film is composed of a first part lying below the source and drain region, and a second part lying below the space between the source and drain regions. The first part of the buried insulating film is thicker than the second part. The bottoms of the source and drain regions contact the first part of the buried insulating film.
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