发明名称 |
Method for fabricating semiconductor device |
摘要 |
A method for fabricating a semiconductor device capable of minimizing deformations of a photoresist pattern and losses of a hard mask. The method includes the steps of: forming an insulating layer for a hard mask on an etch-target layer; forming a sacrificial layer on the insulating layer; forming a photoresist pattern on the sacrificial layer; forming at least one sacrificial hard mask by etching the sacrificial layer with the photoresist pattern as an etching mask; forming the hard mask by etching the insulating layer with the sacrificial hard mask as an etching mask; and forming a predetermined number of patterns by etching the etch-target layer with use of the sacrificial hard mask and the hard mask as etching masks.
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申请公布号 |
US2003104704(A1) |
申请公布日期 |
2003.06.05 |
申请号 |
US20020292540 |
申请日期 |
2002.11.12 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
LEE SUNG-KWON;KIM SANG-IK;KWON II-YOUNG;YOON KUK-HAN;KONG PHIL-GOO;OH JIN-SUNG;JUNG JIN-KI;KIM JAE-YOUNG;KIM KWANG-OK;AHN MYUNG-KYU |
分类号 |
G03F7/20;H01L21/027;H01L21/28;H01L21/3065;H01L21/311;H01L21/3213;H01L21/768;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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