发明名称 |
Method for inducing controlled cleavage of polycrystalline silicon rod |
摘要 |
To avoid problems associated with the formation of unwanted cracks and spalls during the growth of a polycrystalline silicon rod, a flaw is induced in a filament on which silicon will bc deposited to produce a rod. The flaw causes the grown rod to have a cleavage plane such that the rod will break in a controlled manner at a desired location. The flaw can be placed at a location selected such that breakage at the cleavage plane will produce long rods and thereby improve the yield of the rod growing process Such a flaw will also have the effect of minimizing useable rod length losses due to spalling.
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申请公布号 |
US2003104202(A1) |
申请公布日期 |
2003.06.05 |
申请号 |
US20020290885 |
申请日期 |
2002.11.08 |
申请人 |
ADVANCED SILICON MATERIALS LLC |
发明人 |
KECK DAVID W.;OSBORNE EDWARD W.;KAMRUD HALVOR |
分类号 |
C23C16/24;C23C16/44;(IPC1-7):C23C16/00;D02G3/00 |
主分类号 |
C23C16/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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