发明名称 Method for inducing controlled cleavage of polycrystalline silicon rod
摘要 To avoid problems associated with the formation of unwanted cracks and spalls during the growth of a polycrystalline silicon rod, a flaw is induced in a filament on which silicon will bc deposited to produce a rod. The flaw causes the grown rod to have a cleavage plane such that the rod will break in a controlled manner at a desired location. The flaw can be placed at a location selected such that breakage at the cleavage plane will produce long rods and thereby improve the yield of the rod growing process Such a flaw will also have the effect of minimizing useable rod length losses due to spalling.
申请公布号 US2003104202(A1) 申请公布日期 2003.06.05
申请号 US20020290885 申请日期 2002.11.08
申请人 ADVANCED SILICON MATERIALS LLC 发明人 KECK DAVID W.;OSBORNE EDWARD W.;KAMRUD HALVOR
分类号 C23C16/24;C23C16/44;(IPC1-7):C23C16/00;D02G3/00 主分类号 C23C16/24
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