发明名称 Method of manufacturing surface acoustic wave device
摘要 A surface acoustic wave device used as a branching filter and the like in, for example, a mobile communications field to handle high frequencies of about several GHz is manufacturable by forming a metal film on a wafer-like piezoelectric substrate and selectively removing the metal film to form comb-teeth-shaped metal electrodes. The metal film is partly formed in two or more film-forming modes involving different in-wafer-plane film-forming-velocity distributions, and the remaining part thereof is formed in a fixed film-forming mode. An in-wafer-plane film-thickness distribution of a part of the metal film is precisely controllable. Forming the remaining part of the metal film precisely controls the final thickness of the metal film.
申请公布号 US2003104136(A1) 申请公布日期 2003.06.05
申请号 US20020297950 申请日期 2002.12.26
申请人 TAKAGI TOSHIYUKI 发明人 TAKAGI TOSHIYUKI
分类号 H03H3/08;(IPC1-7):B05D5/12;B05D1/36 主分类号 H03H3/08
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