| 摘要 |
<p>In a matrix-addressable apparatus comprising one or more memory devices with multidirectionally switchable memory cells (5) arranged in a passive matrix-addressable array, the memory cells comprise a memory medium in the form of a ferroelectric or electret thin-film memory material capable of being polarized by an applied electric field and exhibiting hysteresis, and preferably the memory material is a polymer or copolymer. A memory device in the apparatus comprises at least a first and a second electrode means (E 1;E2) such that the electrodes (ε2) of the second electrode means (E2) are provided in recesses (3) in the electrodes (ε1) of the first electrode means (E1) and oriented orthogonally thereto, the recesses (3) extending only half-way through the electrodes (ε1) of the first electrode means (E1). The electrodes (ε2) of the second electrode means (E2) are provided in the recesses (3) surrounded by memory material (4a,4b) which also contacts the crossing electrodes (ε1) of the first electrode means (E1) whereby a memory cell (5) is defined in the crossing between electrodes (ε1;ε2) of the first and second electrode means (E1;E2) respectively and formed by a memory material surrounding the electrodes (ε2) of the second means (E2) on at least three sides thereof, thus providing at least three switching directions in the memory cell (5) at different locations thereof. Two or more memory devices can be stacked in the apparatus according to the invention, thus implementing the latter as a volumetric data storage apparatus.</p> |
