发明名称 |
Piezoresistive transducers |
摘要 |
Force detection devices may have high detection precision and may prevent current leakage through a strain gage 126 to the outside. For example, a force detection block 120 may include a semiconductor substrate 122, a first insulating layer 124 and a semiconductor layer 126 (strain gage). The strain gage 126 preferably includes a site where resistance changes in accordance with the stress acting thereon. The strain gage 126 preferably constitutes at least a portion of a ridge 130 projects from the surface of the force detection block 120. A force transmission block 138 may be attached to a top surface of the ridge 130. The width of the first insulating layer 124 is preferably greater than the width of the semiconductor layer 126.
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申请公布号 |
US2003101828(A1) |
申请公布日期 |
2003.06.05 |
申请号 |
US20020300617 |
申请日期 |
2002.11.21 |
申请人 |
KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO |
发明人 |
OMURA YOSHITERU;MIZUNO KENTARO;TSUKADA KOUJI;SAKATA JIRO;FUJITSUKA NORIO |
分类号 |
G01B7/16;G01L1/18;G01L1/22;(IPC1-7):G01L1/22 |
主分类号 |
G01B7/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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