| 摘要 |
The present disclosure relates to a semiconductor memory device. A charge recycling circuit is driven to raise a potential of a restore node and a sensing bar node to a given potential before a sensing operation is performed. After the sensing operation is performed, electric charges discharged from the restore node and from the sensing bar node are stored using the charge recycling circuit and can then be used when a next sensing operation is performed. Therefore, current consumed when the sensing operation is performed can be reduced and the power consumption can be thus reduced.
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