| 摘要 |
<p>A method of creating an undercut sidewall profile within an opening (56') formed in a positive resist layer (46) disposed upon a transparent substrate (40) includes the step of forming a positive resist layer on the upper surface (42) of the substrate, and optically patterning the resist layer by selectively directing light (52) at the resist layer from above the upper surface of the substrate. The lower surface (44) of the substrate is flooded with light (54) to partially expose the lowermost region (50) of the resist layer, and the exposed resist is dissolved to form patterned resist openings have an enlarged width (62) adjacent the upper surface of the substrate. The sidewalls of the resist layer are then flooded with light (64) from above the substrate, the upper region of the resist layer is cured by an electron beam (66), and the resist layer is developed a second time to dissolve exposed portions of the resist sidewalls, thereby forming an undercut resist sidewall profile.</p> |
