METHOD FOR THE FABRICATION OF SILICON NITRIDE, SILICON OXYNITRIDE, AND SILICON OXIDE FILMS BY CHEMICAL VAPOR DEPOSITION

摘要

At least one compound selected from the group consisting of silane compounds with the formulas Si(NHRi)4 and SiH(NHRi)3 (each Ri in each of the preceding formulas is independently selected from C1 to C4 hydrocarbyl) is used as a precursor for silicon nitride, silicon oxynitride, and silicon oxide films.