发明名称 |
Method for depositing refractory metal layers employing sequential deposition techniques |
摘要 |
A method for forming a tungsten layer on a substrate surface is provided. In one aspect, the method includes positioning the substrate surface in a processing chamber and exposing the substrate surface to a boride. A nucleation layer is then deposited on the substrate surface in the same processing chamber by alternately pulsing a tungsten-containing compound and a reducing gas selected from a group consisting of silane (SiH4), disilane (Si2H6), dichlorosilane (SiCl2H2), derivatives thereof, and combinations thereof. A tungsten bulk fill may then be deposited on the nucleation layer using cyclical deposition, chemical vapor deposition, or physical vapor deposition techniques. |
申请公布号 |
US2003104126(A1) |
申请公布日期 |
2003.06.05 |
申请号 |
US20020268195 |
申请日期 |
2002.10.10 |
申请人 |
FANG HONGBIN;YOON HYUNG-SUK A.;LAI KEN KAUNG;YOUNG C.C.;HORNG JAMES;XI MING;YANG MICHAEL X.;CHUNG HUA |
发明人 |
FANG HONGBIN;YOON HYUNG-SUK A.;LAI KEN KAUNG;YOUNG C.C.;HORNG JAMES;XI MING;YANG MICHAEL X.;CHUNG HUA |
分类号 |
C23C16/14;C23C16/02;C23C16/06;C23C16/16;C23C16/44;C23C16/455;H01L21/285;H01L21/8242;H01L27/108;H01L29/78;(IPC1-7):C23C16/00 |
主分类号 |
C23C16/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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