发明名称 Operable synchronous semiconductor memory device switching between single data rate mode and double data rate mode
摘要 A synchronous semiconductor memory device operates an input/output buffer circuit in synchronization with an external clock signal in a single data rate SDRAM operation mode. In a double data rate SDRAM operation mode, an internal clock signal of a frequency two times that of the external dock signal is generated. The input/output buffer circuit is operated in synchronization with the internal dock signal.
申请公布号 US2003103407(A1) 申请公布日期 2003.06.05
申请号 US20030339288 申请日期 2003.01.10
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 OOISHI TSUKASA;ISHIKAWA MASATOSHI
分类号 G11C11/413;G11C7/10;G11C11/407;(IPC1-7):G11C8/18 主分类号 G11C11/413
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