发明名称 ELECTROLESS METHOD OF SEED LAYER DEPOSITION, REPAIR, AND FABRICATION OF Cu INTERCONNECTS
摘要 Electroless deposition of Cu provides for repair of copper seed layers formed by vacuum deposition processes, for formation of copper seed (105) layers on catalytic materials, and for bulk fill (103) of damascene trenches and via openings. Electroless plating baths for such depositions are formulated for both room temperature and elevated temperature operation, and each include a copper source, an environmentally friendly reducing agent, a pH buffer, a complexing agent, and a surfactant.
申请公布号 WO0245155(A3) 申请公布日期 2003.06.05
申请号 WO2001US43861 申请日期 2001.11.06
申请人 INTEL CORPORATION;MCGREGOR, PAUL, J.;DATTA, MADHAV;DUBIN, VALERY;THOMAS, CHRISTOPHER, D. 发明人 MCGREGOR, PAUL, J.;DATTA, MADHAV;DUBIN, VALERY;THOMAS, CHRISTOPHER, D.
分类号 C23C18/30;C23C18/40;H01L21/768 主分类号 C23C18/30
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