METHOD FOR DEPOSITING SILICON NITRIDE FILMS AND SILICON OXYNITRIDE FILMS BY CHEMICAL VAPOR DEPOSITION

摘要

(Problem) To provide a method for the production of silicon nitride and silicon oxynitride films by CVD technology, wherein said method provides acceptable film - deposition rates even at lower temperatures and is not accompanied by the production of large amounts of ammonium chloride. (Solution) Use of a hydrocarbylaminodisilane compound with the formula (R<0>)3-Si-Si-(R<0>)3 (I) {each R<0> is independently selected from the hydrogen atom, chlorine atom, and -NR<1>(R<2>) groups (wherein R<1> and R<2> are each independently selected from the hydrogen atom and C1 to C4 hydrocarbyl with the proviso that R<1> and R<2> may not both be the hydrogen atom) and at least one R<0> is the -NR<1>(R<2>) group} as a precursor for silicon nitride and silicon oxynitride.