| 摘要 |
<p>A trench MOSFET device comprises: a substrate (200) of a first conductivity type; an epitaxial layer (202) of the first conductivity type; wherein the epitaxial layer has a lower impurity concentration than the substrate; a trench extending into the epitaxial layer; an insulated conductive region (211) within the trench; a doped region (206) of the first conductivity type formed within the epitaxial layer between a bottom portion of the trench and the substrate, wherein the doped region has an impurity concentration that is lower than that of the substrate and higher than that of the epitaxial layer; a body region (204) of a second conductivity type formed within an upper portion of the epitaxial layer and adjacent trench; wherein the body region extends to a lesser depth from the upper surface of the epitaxial layer than does the trench; a source region (212) within the body region.</p> |
