| 摘要 |
<p>A bond wafer (2) is reduced to a first film thickness suitable for ion implanting after a base wafer (1) is bonded to the bond wafer (2) by heat treating, and then boron ions are implanted to form a high-concentration boron layer (10). A second thickness reducing process is conducted by selective etching with the high-concentration boron layer (10) used as an etch-stop layer. Accordingly, a production method for an SOI wafer is offered that can reduce to sufficiently low levels both intra-wafer film thickness uniformity and inter-wafer film thickness uniformity even when a very low film thickness level is required for an SOI layer.</p> |
