NITRIDE SEMICONDUCTOR LASER DEVICE AND SEMICONDUCTOR OPTICAL DEVICE

摘要

A drive current is generated by mixing a pulse signal from a pulse generator (13) and a DC current from a DC current power supply (14) by means of a T circuit (11) and injected into a nitride semiconductor laser (10) having a horizontal light−confinement ridge structure. The horizontal light−confinement coefficient of the nitride semiconductor laser (10) is between 85% and 99%. The time when the current waveform of the drive current is continuously over the threshold current of the nitride semiconductor laser ranges from 5 [nsec] to 1,000 [nsec].