发明名称 METHOD FOR THE FABRICATION OF SILICON NITRIDE, SILICON OXYNITRIDE, AND SILICON OXIDE FILMS BY CHEMICAL VAPOR DEPOSITION
摘要 At least one compound selected from the group consisting of silane compounds with the formulas Si(NHRi)4 and SiH(NHRi)3 (each Ri in each of the preceding formulas is independently selected from C1 to C4 hydrocarbyl) is used as a precursor for silicon nitride, silicon oxynitride, and silicon oxide films.
申请公布号 WO03046254(A1) 申请公布日期 2003.06.05
申请号 WO2002IB02910 申请日期 2002.07.26
申请人 L'AIR LIQUIDE, SOCIETE ANONYME A DIRECTOIRE ET CONSEIL DE SURVEILLANCE POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE;DUSSARAT, CHRISTIAN;TSUKADA, ERI;GIRARD, JEAN-MARC 发明人 DUSSARAT, CHRISTIAN;TSUKADA, ERI;GIRARD, JEAN-MARC
分类号 C23C16/42;C23C16/30;C23C16/34;C23C16/40;H01L21/318;(IPC1-7):C23C16/34 主分类号 C23C16/42
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