| 摘要 |
A digital data memory having a bit structure (17) in a memory cell based on a dielectric intermediate separating material with two major surfaces having thereon an anisotropic ferromagnetic thin-film of differing thicknesses (12, 13, 13', 12'). These bit structures (17) are fabricated within structural extent limits to operate satisfactorily, and are fabricated as series connected members of storage line structures. A corresponding conductive word line structure (22) adjacent corresponding ones of these memory cells is selecting or operating them, or both, in data storage and retrieval operations. <IMAGE> |
