| 摘要 |
Apparatus for combinatorial molecular beam epitaxy comprising: a vacuum chamber, a substrate holder for holding a substrate inside said vacuum chamber having a substrate surface bounded by two or more pairs of opposite side regions and defining a plurality of surface regions at known position with respect to said side regions, a gaseous source of oxygen atoms and a plurality of elemental metal sources with source shutters contained in said vacuum chamber, further comprising at least one device being selected from the group consisting of: a heater system for heating said substrate so as to produce a temperature gradient on progressing between one side region and another in a pair of opposite side regions of said substrate, a system for applying said oxygen atoms to said substrate to achieve a gradient of the partial pressure of said source of oxygen atoms and the substrate surface regions, a sieve mask in front of each elemental metal source effective to produce a desired gradient of atomic flux through said sieve mask on progressing between one side region and another in a pair of opposite side regions of the substrate or effective to produce a uniform atomic flux through said sieve mask and a movable substrate-shadowing shutter placed between each elemental metal source and the target placeable at a plurality of selected positions. <IMAGE> |
