发明名称 |
Memory cell configuration and method for operating the configuration |
摘要 |
A memory cell configuration has memory cells that each contain two magnetoresistive elements. If the two magnetoresistive elements of each memory cell are magnetized in such a way that they have different resistances, the information stored in the memory cell can be determined with a resistor half-bridge circuit by assessing whether the signal tapped off at the output is greater than or less than zero.
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申请公布号 |
US6574138(B2) |
申请公布日期 |
2003.06.03 |
申请号 |
US20020094865 |
申请日期 |
2002.03.06 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
SCHWARZL SIEGFRIED;MIETHANER STEFAN |
分类号 |
G11C11/14;G11C11/15;G11C11/16;G11C11/56;H01F10/16;H01F10/30;H01L21/8246;H01L27/105;H01L27/22;H01L43/08;(IPC1-7):G11C11/00 |
主分类号 |
G11C11/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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