发明名称 POROUS SILICON NITRIDE CERAMIC AND ITS MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To obtain a porous silicon nitride ceramic having uniform and fine closed pores, and its manufacturing method. <P>SOLUTION: The porous silicon nitride ceramic having the uniform and fine closed pores is obtained by mixing a metallic silicon powder and a sintering aid, and heat treating it with 2 steps as a pretreatment, by a microwave heating, at a temperature of &ge;1,000&deg;C, wherein, the metallic silicon is nitriding reacted from its surface, and the metallic silicon is diffused into a nitride formed on an outer shell of the metallic silicon. This porous silicon nitride is having closed pores at a high rate, and excellent in mechanical performance. Therefore, it shows excellent performance, when used as a substrate for electronic circuit, etc., which is needed for hygroscopic resistance, low dielectric constant, and low dielectric loss, and also needed for mechanical strength. <P>COPYRIGHT: (C)2003,JPO
申请公布号 JP2003160384(A) 申请公布日期 2003.06.03
申请号 JP20020006821 申请日期 2002.01.16
申请人 SUMITOMO ELECTRIC IND LTD 发明人 MIYANAGA TOMOMASA;KOMURA OSAMU
分类号 C04B35/584;C04B35/591;C04B38/00;H05K1/03 主分类号 C04B35/584
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