| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor package substrate which can cope with the high integration degree of a semiconductor. SOLUTION: An insulation support in places, in which the external connecting terminals of interconnections are formed is removed; through-holes for the external connecting terminals are formed; a plurality of sets of interconnections are formed on one face of the insulating support; a semiconductor element is mounted, via a die bonding tape, on the insulating support on which the plurality of sets of interconnections are formed; semiconductor-element terminals and the interconnections are made to have continuity, the semiconductor element is resin-sealed; external connecting terminals which are made to have continuity to the interconnections are formed at the through holes for the external connecting terminals; and the semiconductor package substrate is separated into individual semiconductor packages.</p> |
