发明名称 |
Electrically erasable and programmable non-volatile semiconductor memory with automatic write-verify controller |
摘要 |
A method for controlling programming of an electrically erasable and programmable nonvolatile memory having a plurality of memory cells, row and column decoders, an address buffer, and a bit line controller including a sense/latch circuit and a data I/O buffer, including supplying address signals to the address buffer to define at least one selected memory cell in the plurality of memory cells; supplying to the bit line controller programming data which corresponds to write data to be written in the selected memory cell; latching the programming data in the sense/latch circuit; writing the write data into the selected memory cell; reading the written data of the selected memory cell and verifying whether or not the data is successfully written; performing a logic operation with respect to the read data and the programming data latched in the sense/latch circuit to determine if the written memory cell is insufficiently written or successfully written; and if an insufficiently written memory cell is found, maintaining the programming data and rewriting the write data into the insufficiently written memory cell.
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申请公布号 |
US6574147(B2) |
申请公布日期 |
2003.06.03 |
申请号 |
US20020101213 |
申请日期 |
2002.03.20 |
申请人 |
TANAKA TOMOHARU;TANAKA YOSHIYUKI;NAKAMURA HIROSHI;ODAIRA HIDEKO |
发明人 |
TANAKA TOMOHARU;TANAKA YOSHIYUKI;NAKAMURA HIROSHI;ODAIRA HIDEKO |
分类号 |
G11C16/10;G11C16/12;G11C16/26;G11C16/34;(IPC1-7):G11C16/10 |
主分类号 |
G11C16/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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