发明名称 |
Dual metal gate CMOS devices and method for making the same |
摘要 |
A method of fabricating a dual metal gate CMOS includes forming a gate oxide in a gate region and depositing a place-holder gate in each of a n-well and p-well; removing the place-holder gate and gate oxide; depositing a high-k dielectric in the gate region; depositing a first metal in the gate region of the p-well; depositing a second metal in the gate region of each of the n-well and p-well; and insulating and metallizing the structure. A dual metal gate CMOS of the invention includes PMOS transistor and a NMOS transistor. In the NMOS, a gate includes a high-k cup, a first metal cup formed in the high-k cup, and a second metal gate formed in the first metal cup. In the PMOS, a gate includes a high-k cup and a second metal gate formed in the high-k cup.
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申请公布号 |
US6573134(B2) |
申请公布日期 |
2003.06.03 |
申请号 |
US20010817834 |
申请日期 |
2001.03.27 |
申请人 |
SHARP LABORATORIES OF AMERICA, INC. |
发明人 |
MA YANJUN;ONO YOSHI;EVANS DAVID R.;HSU SHENG TENG |
分类号 |
H01L21/28;H01L21/8238;H01L27/092;H01L29/423;H01L29/43;H01L29/49;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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