发明名称 |
Method of growing surface aluminum nitride on aluminum films with low energy barrier |
摘要 |
An integrated circuit having an interconnect layer (104) that comprises a first barrier layer (106) and an aluminum-based layer (108) overlying the first barrier layer (106). An aluminum-nitride layer (112) is located on the surface of the aluminum-based layer (108). AlN layer (112) is formed by converting a native aluminum-oxide layer to AlN using a plasma with H2 and N2 supplied independently rather than supplied together in the form of ammonia.
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申请公布号 |
US6573194(B2) |
申请公布日期 |
2003.06.03 |
申请号 |
US20010921225 |
申请日期 |
2001.08.02 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
BRANKNER KEITH J.;SHIH WEI-YAN |
分类号 |
H01L21/318;H01L21/768;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/318 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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