发明名称 |
Method for providing an alignment diffraction grating for photolithographic alignment during semiconductor fabrication |
摘要 |
The use of a resist latent image alignment mark in lieu of using dedicated discrete alignment targets defined on a semiconductor wafer and the use of field oxide step heights for alignment during the fabrication of circuit devices are disclosed. A resist latent image alignment mark is formed in a layer of photoresist material and utilized to position a mask for exposing portions of the photoresist to a radiation source to pattern locations for active areas on a semiconductor substrate. A LOCOS isolation structure is then formed around the active areas. The isolation structure is formed such that the depth of the isolation structure is adjusted to a particular radiation source wavelength. The depth of the isolation structure can then be used as a diffraction grating for stepper alignment. Isolation structure height may also be used as a diffraction grating for stepper alignment.
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申请公布号 |
US6573013(B2) |
申请公布日期 |
2003.06.03 |
申请号 |
US20020213295 |
申请日期 |
2002.08.06 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
HONEYCUTT JEFFREY W.;MCDONALD STEVEN M. |
分类号 |
G03F9/00;(IPC1-7):G03F9/00 |
主分类号 |
G03F9/00 |
代理机构 |
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地址 |
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