| 摘要 |
PROBLEM TO BE SOLVED: To provide a quartz crucible obtainable by a method capable of preventing occurrence of dislocation in a single crystal even when a large diameter crucible is used for pulling a single crystal of large diameter or when taking long time for pulling the single crystal by adopting a low speed of pulling the single crystal. SOLUTION: The quartz crucible 1 for growing a single crystal has a layer on the inner surface 2 thereof in which devitrification accelerator is adhered or contained, where concentration of the devitrification accelerator adhered or contained is varied according to the location in the crucible so that the concentration of the devitrification accelerator at a position where the temperature in the course of single crystal growth is low or at the position where the growing rate of the devitrification layer is slow in the inner surface 2 of the crucible is made higher than the concentration of the devitrification accelerator at a position where the temperature in the course of single crystal growth is high or at the position where the growing rate of the devitrification layer is fast. Further, in the inner surface 2 of the crucible, the concentration of the devitrification accelerator in the inner surface of the bottom 5 is made higher than that in the inner surface of the side wall part 3 and the corner part 4. COPYRIGHT: (C)2003,JPO
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