发明名称 Photo semiconductor integrated circuit device and optical recording reproducing apparatus
摘要 A photo semiconductor integrated circuit device has a photodiode portion and amplifier portion, each portion having a buried layer. The impurity concentration and/or depth of the buried layer for the photodiode portion is lower than that of the buried layer for the amplifier portion. As a result, the frequency band width is widened.
申请公布号 US6573578(B2) 申请公布日期 2003.06.03
申请号 US20010922157 申请日期 2001.08.06
申请人 HITACHI, LTD. 发明人 KIMURA SHIGEHARU;MAIO KENJI;DOI TAKESHI;TAMAKI YOICHI;SHIMANO TAKESHI
分类号 H01L27/14;H01L27/144;H01L31/02;H01L31/10;(IPC1-7):H01L27/14;H01L31/00;H01L31/06 主分类号 H01L27/14
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